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ZXMP2120G4
200V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V (BR)DSS =-200V; R DS(ON) = 25 ; I D = 200mA
DESCRIPTION
This 200V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of telecom and general high voltage circuits.
A SOT23-5 version is also available (ZXMP2120E5).
SOT223
FEATURES
? High voltage
? Low on-resistance
? Fast switching speed
? Low gate drive
? Low threshold
? SOT223 package variant engineered to increase spacing between
high voltage pins.
APPLICATIONS
? Active clamping of primary side MOSFETs in 48 volt DC-DC converters
ORDERING INFORMATION
S
DEVICE
REEL SIZE
TAPE WIDTH (mm)
QUANTITY
D
N/C
(inches)
PER REEL
G
ZXMP2120G4TA
7
12mm embossed
1,000 units
ZXMP2120G4TC
13
12mm embossed
4,000 units
Pinout - top view
DEVICE MARKING
ZXMP
2120
ISSUE 2 - SEPTEMBER 2006
1
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